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Becauseof thehighdielectricstrengthofwater, it isextremelydifficult todischargeplasmainacontrollablewayin the aqueous phase. By using lithographically defined electrodes andmetal/dielectric nanoparticles, we create electric field enhancementthatenablesplasmadischargeinliquidelectrolytesatsignificantlyreducedappliedvoltages.Here,weusehighvoltage (10−30kV)nanosecondpulse(20ns)dischargestogenerateatransientplasmaintheaqueousphase.Anelectrodegeometrywitha radiusofcurvatureofapproximately10μm,agapdistanceof300μm,andanestimatedfieldstrengthof5×106V/cmresultedina reductionintheplasmadischargethresholdfrom28to23kV.Asecondstructurehadaradiusofcurvatureofaround5μmanda gapdistanceof100μmhadanestimatedfieldstrengthof9×106V/cmbutdidnotperformaswellasthelargergapelectrodes. Addinggoldnanoparticles(20nmdiameter) insolutionfurther reducedthethresholdforplasmadischargeto17kVduetothe electricfieldenhancementatthewater/goldinterface,withanestimatedE-fieldenhancementof4×.Addingaluminananoparticles decoratedwithPtreducedtheplasmadischargethresholdto14kV. Inthisscenario, theemergenceofatriplepointatthejuncture ofalumina,Pt,andwaterresultsinthecoexistenceofthreedistinctdielectricconstantsatasingularlocation.Thisleadstoanotable concentrationof electric field, effectively aiding in the initiationof plasma discharge at a reduced voltage. To gain amore comprehensive and detailed understanding of the electric field enhancement mechanism, we performed rigorous numerical simulations.Thesesimulationsprovidevaluableinsights intotheintricateinterplaybetweenthelithographicallydefinedelectrodes, thenanoparticles, andthe resultingelectricfielddistribution, enablingus toextract crucial informationandoptimize thedesign parameters forenhancedperformance. 

Understanding and characterizing the intrinsic properties of charge carrier transport across the interfaces in van der Waals heterostructures is critical to their applications in modern electronics, thermoelectrics, and optoelectronics. However, there are very few published cross-plane resistivity measurements of thin samples because these inherently 2-probe measurements must be corrected for contact and lead resistances. Here, we present a method to extract contact resistances and metal lead resistances by fitting the width dependence of the contact end voltages of top and bottom electrodes of different linewidths to a model based on current crowding. These contributions are then subtracted from the total 2-probe cross-plane resistance to obtain the cross-plane resistance of the material itself without needing multiple devices and/or etching steps. This approach was used to measure cross-plane resistivities of a (PbSe)1(VSe2)1 heterostructure containing alternating layers of PbSe and VSe2 with random in-plane rotational disorder. Several samples measured exhibited a 4 order of magnitude difference between cross-plane and in-plane resistivities over the 6–300 K temperature range. We also reported the first observation of charge density wave transition in the cross-plane transport of (PbSe)1(VSe2)1 heterostructure. The device fabrication process is fully lift-off compatible, and the method developed enables the straightforward measurement of the resistivity anisotropy of most thin film materials with nm thicknesses. 

Abstract Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic, optical and spin properties. For the NV centers, most investigations for quantum sensing applications are targeted on the negatively charged NV (NV⁻), and it is important for the NV centers to be in the NV⁻state. However, it is known that the NV centers are converted to the neutrally charged state (NV⁰) under laser excitation. An energetically favorable charge state for the NV and SiV centers depends on their local environments. It is essential to understand and control the charge state dynamics for their quantum applications. In this work, we discuss the charge state dynamics of NV and SiV centers under high-voltage nanosecond pulse discharges. The NV and SiV centers coexist in the diamond crystal. The high-voltage pulses enable manipulating the charge states efficiently. These voltage-induced changes in charge states are probed by their photoluminescence spectral analysis. The analysis result from the present experiment shows that the high-voltage nanosecond pulses cause shifts of the chemical potential and can convert the charge states of NV and SiV centers with the transition rates of ∼MHz. This result also indicates that the major population of the SiV centers in the sample is the doubly negatively charged state (SiV²⁻), which is often overlooked because of its non-fluorescent and non-magnetic nature. This demonstration paves a path for a method of rapid manipulation of the NV and SiV charge states in the future. 

This study evaluates the beneficial effects of discharging nanosecond pulse transient plasma (NPTP) in a coaxial electrostatic precipitator for capturing nanoscale soot particles (∼50 nm) produced by an ethylene flame.